DARPA Program Manager Joins ISI to Build Nano-Electronics Effort

| July 2, 2010

Fritze will help MOSIS expand its current business portfolio within the DoD community.

Michael Fritze Headshot

Michael Fritze, Ph.D.

ISI Executive Director Herbert Schorr has announced that Dr. Michael (Mike) Fritze, currently a Program Manager at DARPA’s MTO office, will be joining ISI’s technical staff in mid-July, 2010.

Fritze has accepted an offer from ISI to start a research thrust in the area of advanced micro-electronics with emphasis on novel nano-electronics technologies including carbon-electronics. He will also help MOSIS expand its current business portfolio within the DoD community. During his tenure at DARPA, Fritze was responsible for conceiving, developing, obtaining funding for, and managing a diverse portfolio of research programs in the areas of low power electronics, radiation-hardened electronics, micro-fabrication, foundry access, and RF-Electronics.

Programs such as Radiation-Hardening-by-Design, Graphene RF Electronics, Sub-threshold Logic Electronics, Leading-Edge CMOS Foundry Access, etc. were in this portfolio.

“He created an efficient program development and execution structure that welded together disparate research teams and kept them focused on program goals,” said Schorr. “He identified, developed, and refined specific program strategies and steps from inception to implementation, and articulated concept and customer relevance to upper management.

“Over a four-year period, this execution structure resulted in more than $100 million for new research programs. As part of these efforts, he negotiated with domestic semiconductor CMOS foundries and communicated the benefits of providing low cost access to research organizations utilizing the services of US government Trusted Foundry (TAPO) personnel to manage the details of this Program execution.”

This partnership, which was partially funded by DARPA, has resulted in a cost effective way for the foundries to gain access to new, and potentially large customers. In turn, U.S. researchers working on Department of Defense related projects have gained unprecedented access to state-of-the-art electronic technologies.

“Mike is eager to continue his research in these areas at ISI, working in concert with the government and commercial Research and Development communities,” said Schorr. He will reside at ISI’s Arlington, VA, facility, but he intends to develop relevant R&D thrusts at both locations of ISI (Marina del Rey and Arlington).

Fritze was an IPA from MIT Lincoln Laboratory during his years at DARPA. At Lincoln Laboratory, he was a Research Staff Member in the Advanced Silicon Technology Group, where he conducted research associated with optical lithography resolution enhancement, silicon on insulator transistors, and silicon on insulator integrated optics (1995-2005).

Prior to Lincoln Laboratory, he was a Post-Doctoral Researcher, Advanced Photonics Group, Bell Laboratories, Holmdel, NJ, where he studied the optical properties of compound semiconductor quantum well structures using optical spectroscopy, and femtosecond laser spectroscopy. (1993-1994). He had previously been a Research Assistant at Bell Communications Research (Bellcore), Murray Hill, NJ, conducting research and development related to the electrical properties of compound semiconductor quantum well structures (1985-1986).

Fritze holds a BS in Physics from Lehigh University, Bethlehem, PA, and an MS and PhD in Physics from Brown University, Providence, RI.

“Please join me in welcoming Mike to ISI,” Schorr told ISI researchers and staff. “I urge you to meet him and get to know him well, so that together you can establish exciting new research opportunities for ISI.”

Published on July 2nd, 2010

Last updated on May 31st, 2024

Share this Story